Cart (Loading....) | Create Account
Close category search window

Preparation and Microstructure Analysis of GaN Nanowires with the Sol-Gel Method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yi Yang ; Coll. of Inf. Sci. & Technol., Northwest Univ. Northwest Univ., Xian, China ; Xuewen Wang ; Yuzhou Jing

The two-step method, which includes the sol-gel process and ammoniation in high temperature, is used to synthesize GaN nanomaterials on Si (111) substrate. Ga(NO3)3 was used as gallium source, citric acid as the chelating agent and nickel nitrate as catalyst. After the sol can be formed by mixing ethanol solutions of Ga(NO3)3 and citric acid, the precursor films were coated on Si slices with or without the catalyst. and the dried samples are treated in ammonia at different temperatures in an atmosphere furnace. X-ray diffraction instrument (XRD) indicates that the as-prepared samples are hexagonal GaN, and scanning electron microscope (SEM) reveals that the microstucture morphologies of samples are crystal, nanorods and nanowires, and then high-resolution transmission electron microscopy (HTEM) were used to characterize the as-synthesized nanowire is of single-crystalline hexagonal wurtzite structure. The conclusion can be drawn that the catalyst and ammoniation temperature can influence greatly on the microstucture and shape features of as-synthesized GaN samples .

Published in:

Photonics and Optoelectronics (SOPO), 2012 Symposium on

Date of Conference:

21-23 May 2012

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.