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High-Performance Germanium \Omega -Gate MuGFET With Schottky-Barrier Nickel Germanide Source/Drain and Low-Temperature Disilane-Passivated Gate Stack

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12 Author(s)
Bin Liu ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Xiao Gong ; Genquan Han ; Lim, P.S.Y.
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We report high-performance p-channel Ω-gate germanium (Ge) p-channel multigate field-effect transistor (MuGFET) with low-temperature Si2H6 surface passivation and Schottky-barrier nickel germanide (NiGe) metallic source/drain, fabricated on high-quality germanium-on-insulator (GeOI) substrates using sub-400°C process modules. As compared with other reported p-channel multigate Ge devices formed by top-down approaches, the Ge MuGFETs in this letter have a record-high ON-state current ION of ~450 μA/μm at VGS - VTH = -1 V and VDS = - 1 V. High peak intrinsic saturation transconductance of ~740 μS/μm and low OFF-state current are reported. We also study the effect of fin or channel doping on Ge MuGFET performance. The simple MuGFET process developed using GeOI substrate would be a good reference for future 3-D Ge device fabrication.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 10 )

Date of Publication:

Oct. 2012

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