By Topic

High-Performance Germanium \Omega -Gate MuGFET With Schottky-Barrier Nickel Germanide Source/Drain and Low-Temperature Disilane-Passivated Gate Stack

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

12 Author(s)
Bin Liu ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Xiao Gong ; Genquan Han ; Lim, P.S.Y.
more authors

We report high-performance p-channel Ω-gate germanium (Ge) p-channel multigate field-effect transistor (MuGFET) with low-temperature Si2H6 surface passivation and Schottky-barrier nickel germanide (NiGe) metallic source/drain, fabricated on high-quality germanium-on-insulator (GeOI) substrates using sub-400°C process modules. As compared with other reported p-channel multigate Ge devices formed by top-down approaches, the Ge MuGFETs in this letter have a record-high ON-state current ION of ~450 μA/μm at VGS - VTH = -1 V and VDS = - 1 V. High peak intrinsic saturation transconductance of ~740 μS/μm and low OFF-state current are reported. We also study the effect of fin or channel doping on Ge MuGFET performance. The simple MuGFET process developed using GeOI substrate would be a good reference for future 3-D Ge device fabrication.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 10 )