Referenced Items are not available for this document.
Ultrawide bandwidth light-emitting diodes (LEDs) using eight layers of InAs/GaAs quantum dots (QDs) of equally tuned heights are reported. Tilted and tapered waveguides of various dimensions are tested under continuous-wave operation conditions. An emission spectrum with 3-dB bandwidth up to 173 nm at a peak wavelength of 1064.5 nm is achieved. The measured emission spectra of the QDs-LEDs as a function of the injection current indicated that the obtained large bandwidth is related to the contribution of the excited states (p, d) from the ensemble of the dots to the recombination mechanism. Continuous-wave output power of 0.6 mW is measured in the corresponding device that is made of a 1-mm-long waveguide and with tilted and tapered angles of 6° and 2°, respectively.
Published in:
Photonics Technology Letters, IEEE
(Volume:24
,
Issue:
19
)
Date of Publication: Oct.1, 2012
- Page(s):
- 1677 - 1679
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 12982241
- Digital Object Identifier :
- 10.1109/LPT.2012.2211867
- Product Type:
- Journals & Magazines
- Date of Publication :
- 16 August 2012
- Date of Current Version :
- 11 September 2012
- Issue Date :
- Oct.1, 2012
- Sponsored by :
- IEEE Photonics Society
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