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Chemical etching of boron-rich layer and its impact on high efficiency n-type silicon solar cells

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6 Author(s)
Kyungsun Ryu ; School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, Georgia 30332-0250, USA ; Upadhyaya, A. ; Song, Hyun-Jin ; Chel-Jong Choi
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This paper reports on an effective chemical etching treatment to remove a boron-rich layer which has a significant negative impact on n-type silicon (Si) solar cells with boron emitter. A nitric acid-grown oxide/silicon nitride stack passivation on the boron-rich layer-etched boron emitter markedly decreases the emitter saturation current density J0e from 430 to 100 fA/cm2. This led to 1.6% increase in absolute cell efficiency including 22 mV increase in open-circuit voltage Voc and 1.9 mA/cm2 increase in short-circuit current density Jsc. This resulted in screen-printed large area (239 cm2) n-type Si solar cells with efficiency of 19.0%.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 7 )