Cart (Loading....) | Create Account
Close category search window
 

Measurement and Analysis of a High-Speed TSV Channel

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Heegon Kim ; Terahertz Interconnection & Package Lab., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea ; Jonghyun Cho ; Myunghoi Kim ; Kiyeong Kim
more authors

Using high-speed through-silicon via (TSV) channels is a potential means of utilizing 3-D interconnections to realize considerable high-bandwidth throughput in vertically stacked and laterally distributed integrated circuits. However, although the TSV and a silicon interposer in a high-speed TSV channel lead to a significant decrease of the interconnect length, the received digital signal after transmission through a TSV channel is still degraded at a high data-rate due to the nonidealities of the channel. Therefore, an analysis of the signal integrity in a high-speed TSV channel is necessary. In this paper, a single-ended high-speed TSV channel is measured and analyzed in the frequency-domain and the time-domain. To measure the high-speed TSV channel, two types of test vehicles are fabricated, consisting of TSVs and interposers. With these test vehicles, the channel losses are measured in the frequency-domain up to 20 GHz, and eye-diagrams are measured in the time-domain at 1 Gb/s and 10 Gb/s. Based on these measurements, the channel loss, characteristic impedance, and reflection of the high-speed TSV channel are analyzed and compared to those of the channel in multichip module (MCM) package. Because of the losses from the silicon-substrate and the thin oxide-layer used in the TSVs, the overall loss of the high-speed TSV channel is higher than that of the MCM channel. In addition, the characteristic impedance of the high-speed TSV channel is frequency-dependent, whereas that of the MCM channel is frequency-independent. Moreover, in contrast to the MCM channel, the reflection is negligible in the high-speed TSV channel because the channel is too short and the losses are too high to be affected by the reflection. Finally, the design guidance of a high-speed TSV channel for wide bandwidth is determined based on the analysis of the measurements.

Published in:

Components, Packaging and Manufacturing Technology, IEEE Transactions on  (Volume:2 ,  Issue: 10 )

Date of Publication:

Oct. 2012

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.