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Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel

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6 Author(s)
Li-Jung Liu ; Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Kuei-Shu Chang-Liao ; Yi-Chuen Jian ; Jen-Wei Cheng
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The operation characteristics of p-channel TaN/ Al2O3/HfO2/HfAlO2/SiO2/Si MAHOS-type nonvolatile memory devices with different Ge contents in a SiGe buried channel are investigated in this letter. Compared with those of a device having a conventional Si-channel, both programming and erasing speeds are significantly improved by employing a Si0.7Ge0.3 buried channel. Satisfactory retention and excellent endurance characteristics up to 106 P/E cycles with 4.1-V memory window show that the degradation on reliability properties, if it exists, is negligible when the SiGe buried channel is introduced.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 9 )