By Topic

Exceptionally Narrow-Band Quantum Dot Infrared Photodetector

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

13 Author(s)
Alvarenga, D.R. ; Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Brazil ; Parra-Murillo, C.A. ; Kawabata, R.M.S. ; Guimaraes, P.S.S.
more authors

InGaAlAs/InGaAs/InGaAlAs/InAs/InP quantum-dot structures have been investigated for the development of infrared photodetectors capable of generating photocurrent peaks exceptionally narrow for sharp wavelength discrimination. Our specially designed structure displays a photocurrent peak at 12 $mu{rm m}$ with a full width at half maximum, limited by inhomogeneous broadening, of only 4.5 meV. In agreement with two independent energy level calculations, we attribute this peak to photon absorption between InAs quantum dot bound states, followed by a three step carrier extraction mechanism in which the coupling to the adjacent InGaAs quantum well is a key feature. The possible role played by intraband Auger scattering, multiphoton sequential absorption and tunneling in generating the observed current peak is also addressed.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:48 ,  Issue: 10 )