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Static multipole method applied to boundary conditions for semiconductor device simulations

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3 Author(s)
Fernandez, G.I. ; Dept. de Electron. y Comput., Univ. de Santiago de Compostela, Santiago de Compostela, Spain ; Garcia-Loureiro, A.J. ; Aldegunde, M.

As an intermediate step in a semiconductor device simulation framework, we write a multipole method to evaluate the electrostatic potential in the boundary nodes induced by the conduction electrons. A method initially designed to solve the n-body problem could not be the best choice, but as we have found, the results are excellent, obtaining a speed up of about 300 at some cases, and even 600 at the best situation, compared with the classical method using one core. Also, the method offers small errors and we find a good opportunity to optimize the algorithm in future works.

Published in:

High Performance Computing and Simulation (HPCS), 2012 International Conference on

Date of Conference:

2-6 July 2012