Cart (Loading....) | Create Account
Close category search window

Keeping Capacitance Small: The Quest to Integrate Electronics on High-Resistivity, Fully Depleted Detectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Sampietro, M. ; Dipartimento di Elettronica e Informazione, Politecnico of Milano, Milano, 20133, Italy

It was 1983 when the first experimental result proved that it was possible to produce a semiconductor detector of virtually any area (even as big as a wafer) and sensitive throughout the whole volume but with a tiny, low-capacitance collecting electrode. The device was fully depleted of carriers, as in a reverse junction single diode but through the full wafer thickness, and the generated carriers are drifted in a controlled way toward the collecting electrode. At that time, the device was called a silicon drift chamber (SDC), and it was the realization of a long-pursued dream of the scientists working in the detector field: to create a large detector, simple in operation, but still able to take advantage of the highest possible energy resolution obtainable through such a low-capacitance contact. This class of detectors, allowing position reconstruction of the interaction event with micrometer position resolution and precise charge reconstruction of the released energy within a few electrons, is indeed one of the greatest achievements of the career of Emilio Gatti and the best product of his deep and fruitful scientific and personal collaboration with Pavel Rehak of Brookhaven National Laboratory in Upton, New York.

Published in:

Solid-State Circuits Magazine, IEEE  (Volume:4 ,  Issue: 3 )

Date of Publication:

Summer 2012

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.