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Nonplanar NiSi Nanocrystal Floating-Gate Memory Based on a Triangular-Shaped Si Nanowire Array for Extending Nanocrystal Memory Scaling Limit

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7 Author(s)
Jingjian Ren ; Quantum Structures Laboratory, Department of Electrical Engineering, University of California , Riverside, CA, USA ; Bei Li ; Jian-Guo Zheng ; Mario Olmedo
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A nonplanar Flash memory architecture with ultrahigh-density (~1.5 × 1012 cm-2) NiSi nanocrystals (NCs) as the floating gate is demonstrated using a triangular-shaped Si nanowire array as the memory transistor channel. The memory device shows good programming, erasing, and retention characteristics. This result suggests that nonplanar devices can extend NC memory scaling limit.

Published in:

IEEE Electron Device Letters  (Volume:33 ,  Issue: 10 )