Effects of Device Geometry on Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

This letter discusses the effects of device geometry, such as channel layer thickness and multiple-gate structure on hetero-gate-dielectric tunneling field-effect transistors (HG TFETs). According to simulation results, contrary to conventional TFETs or MOSFETs, HG TFETs show improved subthreshold swing
$(SS)$
for increasing channel thickness or decreasing number of gates. The trend with on-current
$I_{\rm ON}$
depends on operating voltage
$V_{DD}$
.