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Design and Scalability of a Memory Array Utilizing Anchor-Free Nanoelectromechanical Nonvolatile Memory Device

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5 Author(s)
Vaddi, R. ; Div. of Circuits & Syst., Nanyang Technol. Univ., Singapore, Singapore ; Pott, V. ; Geng Li Chua ; Lin, J.T.M.
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This letter explains a nanoelectromechanical (NEM) nonvolatile memory (NVM) architecture employing an anchor-free electrode (shuttle) structure. The proposed NEM device utilizes adhesion forces to achieve bistable mechanical states for nonvolatile data storage. The anchor-free electrode facilitates better scalability compared to conventional anchored NEM devices, which is desirable for circuit applications. The structure is electrostatically actuated and has low operating voltage. A novel memory cell consisting of the proposed NEM memory device and two MOS transistors (1NEM-2T) is proposed for array implementation. The scalability analysis of the proposed NEM NVM array is also presented.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 9 )