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This paper demonstrates the program-voltage (20 V) booster operations with stacked Si-chips for 3D-integrated Solid-State-Drives. The magnetic field radiated by the switching current of the boost converter induces the eddy current in the conductor. The eddy current graduates the boost converter performance due to the lowered inductance of the coil. The effects on the performance of the boost converter as a function of the distance from the coil to conductor are investigated. The 3D-SSD requires the >; 0.84 mm space between the coil and the conductor to generate the program-voltage of 20 V. By inserting NAND flash memory chips between the coil and the conductor, the 3D-SSD can be successfully realized without the output voltage degradation.