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Effect of planarity on the 3D integration in 3-D integrated CMOS image sensor

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9 Author(s)
Nam Hee Kwon ; Dept. of Nano Bio & Energy Eng., Chungang Univ., Seoul, South Korea ; Hong, S.M. ; Yong-Won Cha ; Sun Jae Lee
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In this work, some of the tradeoffs that need to be considered in optimizing a back-illuminated (BSI) sensor were described. The manufacturing feasibility of a BSI CMOS image sensor was demonstrated and compared between the front-illuminated (FSI) and back-illuminated (BSI) versions of the sensor with the same fabrication process. 3D integration processes were evaluated to get stable performance of BSI CMOS image sensor.The broadband quantum efficiency (81% for BSI) improved 2.7 times over FSI sensitivity.

Published in:

3D Systems Integration Conference (3DIC), 2011 IEEE International

Date of Conference:

Jan. 31 2012-Feb. 2 2012

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