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Evaluation of wafer level Cu bonding for 3D integration

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8 Author(s)
Sung-Geun Kang ; Microsyst. Packaging Center, Nowongu, South Korea ; Youngrae Kim ; Eun-Sol Kim ; Naeun Lim
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Alignment from an aligner, bond spacer removal during bonding, and wafer warpage are found to be the influential issues for the misalignment in wafer level bonding process. Also, Cu surface pre-treatment, thermo-compression bonding conditions such as temperature, pressure, ambient gas, annealing time, and Cu CMP process affect significantly a bonding quality.

Published in:

3D Systems Integration Conference (3DIC), 2011 IEEE International

Date of Conference:

Jan. 31 2012-Feb. 2 2012

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