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Low-temperature bonding of LSI chips to PEN film using Au cone bump for heterogeneous integration

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4 Author(s)
Shuto, T. ; Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan ; Watanabe, N. ; Ikeda, A. ; Asano, T.

We show that interconnection bonding of LSI chip to metallization on poly(ethylene naphthalate) (PEN) film can be realized by using cone-shaped compliant bump. We have investigated two designs of the counter electrode. One is simple metal pad electrode and the other is an electrode in which cross-shaped slit was formed. The bonding between the cone-shaped bump and the simple pad electrode was found to be realized at 150°C. More than 10,000 connections with about 100 mΩ/bump were formed. When the cross-shaped slit was employed, room-temperature bonding was achieved.

Published in:

3D Systems Integration Conference (3DIC), 2011 IEEE International

Date of Conference:

Jan. 31 2012-Feb. 2 2012