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1.3 μm InAs/GaAs quantum dot lasers on Si substrates by low-resistivity, Au-free metal-mediated wafer bonding

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5 Author(s)
Tatsumi, Tomohiko ; Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan ; Tanabe, K. ; Watanabe, Katsuyuki ; Iwamoto, Satoshi
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Low-resistivity GaAs/Si metal-mediated wafer bonding has been investigated for silicon photonics applications. Ag thin-film bonding agent was found to significantly reduce interfacial resistivity relative to the previous bonding mediated by Au-based alloy. Lowering of the interfacial resistivity was found to saturate at 1–2 h of bonding time. A bonding temperature around 300 °C was found optimal to balance the trade-off between elemental interdiffusion and oxidation. On the basis of the bonding investigation, 1.3 μm InAs/GaAs ridge-type quantum dot lasers on Si substrates with Au-free GaAs/Si heterointerfaces have been fabricated. The laser device exhibited a significantly lower device series resistivity and threshold current density than the previous Au-mediated-bonded and direct-grown lasers.

Published in:

Journal of Applied Physics  (Volume:112 ,  Issue: 3 )

Date of Publication:

Aug 2012

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