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Polarized light emission from GaInN light-emitting diodes embedded with subwavelength aluminum wire-grid polarizers

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8 Author(s)
Ma, Ming ; Future Chips Constellation, Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA ; Meyaard, David S. ; Shan, Qifeng ; Cho, Jaehee
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4744422 

We demonstrate a back-emitting (sapphire-substrate emitting) linearly polarized GaInN light-emitting diode (LED) embedded with a subwavelength-sized aluminum wire-grid polarizer (WGP). Rigorous coupled wave analysis is implemented to study the polarization characteristics of such a WGP LED. The aluminum nanowire grating with a period of 150 nm is located on the sapphire backside of a GaInN LED structure and is fabricated by electron-beam lithography and inductively coupled plasma reactive-ion etching. A polarization ratio of 0.96 is demonstrated for a WGP GaInN LED in good agreement with simulation results.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 6 )

Date of Publication:

Aug 2012

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