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Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes

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9 Author(s)
Wang, Liancheng ; Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China ; Zhang, Yiyun ; Li, Xiao ; Liu, Zhiqiang
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InGaN-based vertical structure light emitting diodes (VLEDs) with multi-layer graphene transparent electrodes with higher optical output have been fabricated and tested. High temperature annealing introduced inter-diffusion of metal atoms and Ga atoms and generated the partially sandwiched graphene structure, which contributed to the performance improvement of VLEDs.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 6 )