By Topic

In-Line Supermapping of Storage Capacitor for Advanced Stack DRAM Reliability

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Chung-Yuan Lee ; Adv. Technol. Group, Inotera Memories, Inc., Taoyuan, Taiwan ; Chao-Sung Lai ; Yaw-Wen Hu ; Wun Wang
more authors

Model-based infrared reflectometry (MBIR) is a novel nondestructive technology which has been introduced for fast-response in-line monitoring of deep-trench dynamic random access memory (DRAM). However, for mainstream stack DRAM, MBIR application is hard to implement due to underlayer metal reflection noise. Furthermore, the production control of the stack DRAM storage capacitor is always the major concern of yield loss and reliability problems. Traditionally, the production monitoring of the storage capacitor has been performed by an x-sectional scanning electron microscope in a PFA laboratory or electron beam inspection (EBI). Unfortunately, it is quite time consuming and has a high cost. In this paper, we report a successful MBIR measurement at scribing line scatter spot with void fraction analysis methodology on 50-nm stack DRAM. We demonstrate excellent correlation of the electrical storage capacitance with a special donut shape, the EBI of underetched storage contact, and the neighboring storage capacitor shortage. The repeatability of the MBIR test is good with average sigma values of 0.56% for the top void fraction and 1.73% for the bottom void fraction, which indicate that MBIR can become a powerful metrological tool for improving product yield and reliability.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:13 ,  Issue: 1 )