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We fabricated pentacene field-effect transistors using polysilsesquioxane (PSQ) as a gate dielectric material that can be cured at sufficiently low temperatures for low cost plastic substrates. The surface roughness of the PSQ films were reduced by the introduction of 3-methacryloxypropyl groups, and their surface energy was controlled to match with that of the pentacene layers by the introduction of phenyl groups. Consequently, the carrier mobility was improved by two orders of magnitude and reached 0.38 cm2 V-1 s-1.