By Topic

Study of polarity effect in SiOx-based resistive switching memory

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
8 Author(s)
Chang, Yao-Feng ; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA ; Chen, Pai-Yu ; Chen, Yen-Ting ; Xue, Fei
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The SiOx-based resistive switching memory was realized by a simple TaN/SiO2/n++ Si-substrate structure. Post-deposition annealing treatment not only reduced operational variation but also stabilized electrical reliability during repeated switching. The relationship between applied voltage polarity and reset switching parameters is investigated and may indicate that resistive switching occurs at the cathode side. Oxygen-vacancy clustering and asymmetrical thermal-dissipation of the electrodes are discussed as possible causes for the polarity dependence of reset switching parameters. Data retention in high- and low-resistance states was measured for over 104 s, indicating promising potential for future nonvolatile memory applications.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 5 )