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This paper presents a miniature RF MEMS (Micro—Electro-Mechanical System) switch design optimized for the high residual stress and stress gradient available in a thin metal layer process. The switch demonstrates a stress gradient tolerance of ±100 MPa/µm, with <40% pull-down voltage change. The up-state capacitance is 9.4 fF and results in 20 dB isolation at 20 GHz. The contact resistance is 3.6 Ω for an Au-Au contact under 30 V actuation voltage.