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A miniature RF MEMS metal-contact switch with high biaxial and stress-gradient tolerance

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2 Author(s)
Niu, Chenhui ; Department of Electrical and Computer Engineering, University of California San Diego (UCSD), La Jolla, 92093, USA ; Rebeiz, Gabriel M.

This paper presents a miniature RF MEMS (Micro—Electro-Mechanical System) switch design optimized for the high residual stress and stress gradient available in a thin metal layer process. The switch demonstrates a stress gradient tolerance of ±100 MPa/µm, with <40% pull-down voltage change. The up-state capacitance is 9.4 fF and results in 20 dB isolation at 20 GHz. The contact resistance is 3.6 Ω for an Au-Au contact under 30 V actuation voltage.

Published in:

Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International

Date of Conference:

17-22 June 2012