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A W- and G-band MMIC source using InP HBT technology

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4 Author(s)
Kozhuharov, R. ; Chalmers University of Technology, Gothenburg, SE-412 96, Sweden ; Mingquan Bao ; Gavell, Marcus ; Zirath, H.

A frequency doubler/quadrupler for W-and G-band application is designed and fabricated utilizing an InP 250nm heterojunction bipolar transistor process. The multiplier is integrated with balanced V-band VCO. The VCO can be tuned between 57 to 61 GHz with average output power of 6 dBm and phase noise lower than −95 dBc/Hz at 1 MHz offset frequency. The circuit VCO plus multiplier can be used as a source with output power of −2dBm in 113 –118 GHz bandwidth and −4dBm from 212 to 228 GHz.

Published in:

Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International

Date of Conference:

17-22 June 2012

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