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A 1.2V broadband D-band power amplifier with 13.2-dBm output power in standard RF 65-nm CMOS

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8 Author(s)
Zuo-Min Tsai ; Department of Electrical Engineering, National Chung Cheng University, Chiayi, Taiwan, 621, R.O.C. ; Hsin-Chiang Liao ; Yuan-Hong Hsiao ; Huei Wang
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A D-band CMOS power amplifier in 65-nm CMOS with wider than 30 GHz small signal gain bandwidth is developed by using proposed impedance transform network to split original matching network into 8-ways to integrate 8 transistors. Without using additional combining networks, the 4-stage power amplifier achieves 13.2 dBm saturation output power with 1.2 V supply at 140 GHz in a compact size of 0.38 mm2. The peak power-added efficiency is 14.6% with 115.2 mW dc power.

Published in:

Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International

Date of Conference:

17-22 June 2012