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This paper outlines a novel electrothermal model for the microwave and RF p-i-n diode suitable for use in time-domain simulators. The model builds on previous time-domain models and for the first time includes a thermal component that uses easily obtained datasheet parameters such as thermal resistance. The paper shows how the thermal model modifies the current microwave and RF p-i-n diode model by dividing the diode into two separate regions and how the thermal models impact each separately. The model is verified with resistance-temperature measurements. An application of the model in a high power microwave/RF switch is also presented. A link to a spreadsheet allowing calculation of the model parameters is included for ease of implementation by the microwave or RF engineer.