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Time-domain electrothermal circuit-level modeling of microwave and RF PIN diodes

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1 Author(s)
Robert H. Caverly ; Department of Electrical and Computer Engineering, Villanova University, PA 19085 USA

This paper outlines a novel electrothermal model for the microwave and RF p-i-n diode suitable for use in time-domain simulators. The model builds on previous time-domain models and for the first time includes a thermal component that uses easily obtained datasheet parameters such as thermal resistance. The paper shows how the thermal model modifies the current microwave and RF p-i-n diode model by dividing the diode into two separate regions and how the thermal models impact each separately. The model is verified with resistance-temperature measurements. An application of the model in a high power microwave/RF switch is also presented. A link to a spreadsheet allowing calculation of the model parameters is included for ease of implementation by the microwave or RF engineer.

Published in:

Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International

Date of Conference:

17-22 June 2012