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High performance surface acoustic resonators in 1–3 GHz range using ScAlN/6H-SiC structure

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5 Author(s)
Hashimoto, K. ; Graduate School of Engineering, Chiba University, 1–33 Yayoi-cho, Inage-ku, 263-8522, Japan ; Sato, Shuhei ; Teshigahara, A. ; Nakamura, Takuya
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This paper describes application of Sc-doped AlN (ScAlN) to wideband surface acoustic wave (SAW) devices in 1–3 GHz range. First, it is shown theoretically that large SAW velocity and electromechanical coupling factor are simultaneously achievable when the ScAlN is combined with a base substrate with extremely high acoustic wave velocities such as diamond and SiC. Next, SAW delay lines are fabricated on the ScAlN/6H-SiC structure, and it is shown that SAW properties are simulated well theoretically. Finally, one-port SAW resonators are fabricated on the structure, and it is shown how high performances are achievable in 1–3 GHz range by use of the structure.

Published in:

Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International

Date of Conference:

17-22 June 2012