By Topic

Highly efficient Doherty amplifier with peaking cell controlled using optimized shaped gate voltage

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Joon Hyung Kim ; Electronics and Telecommunications Research Institute (ETRI), 138 Gajeong-ro, Yuseong, Daejeon, Republic of Korea ; Sung Jun Lee ; Bong Hyuk Park ; Jae Ho Jung
more authors

In this paper, the optimum gate control for a peaking cell of a Doherty amplifier is proposed. The proposed gate voltage waveform based on a variation in transcoductance provides a sufficient fundamental current for a peaking cell, which is relevant to the performance of a carrier cell. For further verification, a Doherty amplifier controlled by the proposed method and targeting a 3G LTE base station at 2.6 GHz has been fabricated using a commercially available 120 W GaN (Gallium Nitride) device. The amplifier provides a drain efficiency of 49.2% at an average output power of 45.6 dBm with an 8.5 dB PAPR signal maintaining an adjacent channel leakage power ratio of −48 dBc through digital pre-distortion (DPD) functionality.

Published in:

Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International

Date of Conference:

17-22 June 2012