By Topic

Mechanical tensile strain induced gate and substrate currents change in n and p-channel metal-oxide-semiconductor field-effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Wu, Wangran ; School of Electronic Science and Engineering, Nanjing University, No.22 Hankou Rd., Nanjing 210093, People''s Republic of China ; Pu, Yu ; Sun, Jiabao ; Zhao, Yi
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4740278 

To investigate and understand the reliability behavior of strained silicon devices, the changes of gate currents (Ig) and substrate currents (Isub) in n and p-channel metal-oxide-semiconductor field-transistors (MOSFETs) under different types of mechanically applied tensile stresses have been studied. It has been observed that, under the uniaxial tensile stress, both Ig and Isub of pMOSFETs increase with the increase of applied stress under the inversion and the accumulation conditions. However, an opposite stress dependence in nMOSFETs has been observed for Ig and Isub in both the inversion and the accumulation regimes. Similar changes have been found for Ig and Isub of nMOSFETs under biaxial tensile stress. The observations are explained by the strain induced band structure modulation and the repopulation of carriers.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 5 )