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Silicon carbide (SiC) is one of the most promising materials for next-generation power electronic devices, owing to its superior physical properties. Among existing SiC power devices, the SiC junction field-effect transistor (JFET) (SiC-JFET) has excellent performance. A high-power discrete package of a SiC-JFET was developed with the aim of being applied to the High Energy Accelerator Research Organization (KEK) digital accelerator. The device was assembled on a 58 mm × 36 mm copper base plate and with a height of 7 mm. The size of the die was 4.16 mm × 4.16 mm. The device was tested using a pulse discharge circuit and successfully operated at 1 MHz, 1 kV, and 27 A. The power dissipation and the thermal resistance were estimated at 235 W and 0.56 K/W.