Cart (Loading....) | Create Account
Close category search window
 

AlGaN/GaN MOSHEMT With High-Quality \hbox {Gate} \hbox {SiO}_{2} Achieved by Room-Temperature Radio Frequency Magnetron Sputtering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Liang Pang ; Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA ; Yaguang Lian ; Dong-Seok Kim ; Jung-Hee Lee
more authors

High-quality SiO2 is deposited on GaN by radio frequency (RF) magnetron sputtering at room temperature. Adding oxygen to the sputtering gas effectively compensated for the oxygen vacancies and resulted in a breakdown field of 9.6 MV/cm for the sputtered- SiO2 film on GaN. The reduced electron concentration and mobility of the 2-D electron gas due to the sputtering-induced surface damage were effectively removed by an optimized postannealing treatment. A sputtered-SiO2/ AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (HEMT) (MOSHEMT) was demonstrated with the lowest thermal energy requirement among all the dielectric deposition techniques, which exhibited a saturation drain current of 621 mA/mm and a breakdown voltage of 205 V at the gate-drain distance of 2 μm. More than four orders of magnitude lower gate leakage current than conventional HEMT of the same dimension was achieved. These characteristics demonstrate excellent potential of using RF magnetron sputtering to produce gate insulators for GaN-based MOSHEMTs.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 10 )

Date of Publication:

Oct. 2012

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.