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GaN-Based Miniaturized Cyan Light-Emitting Diodes on a Patterned Sapphire Substrate With Improved Fiber Coupling for Very High-Speed Plastic Optical Fiber Communication

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11 Author(s)
Wun, J.-M.$^{1}$Department of Electrical Engineering, National Central University, Taoyuan, Taiwan ; Lin, C.-W. ; Chen, W. ; Sheu, J.-K.
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We demonstrate the performance of a novel cyan light-emitting diode (LED) on a patterned sapphire (PS) substrate as a light source for plastic optical fiber (POF) communications with the central wavelength at 500 nm. To further enhance the external quantum efficiency (EQE) and output power of this miniaturized high-speed LED, a LED with a PS substrate is adopted. Furthermore, by greatly reducing the number of active $hbox{In}_{rm x}hbox{Ga}_{1 - {rm x}}hbox{N/GaN}$ multiple quantum wells (MQWs) to four and minimizing the device active area, we can achieve a record-high electrical-to-optical (E–O) bandwidth (as high as 400 MHz) among all the reported high-speed visible LEDs under a very small dc bias current (40 mA). The fiber coupling efficiency has been improved in 4 dB using lens with a 500-$mu hbox{m}$ diameter mounted on the LED chip. Thus, the maximum fiber-coupled power was $-$2.67 dBm at the bias current of 40 mA. The 1.07-Gb/s data transmissions over a 50-m SI-POF fiber have been successfully demonstrated using this device at the bias current of 40 mA.

Published in:

Photonics Journal, IEEE  (Volume:4 ,  Issue: 5 )

Date of Publication:

Oct. 2012

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