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Electrical conduction through Cu2S corrosion films on copper contacts

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4 Author(s)
N. B. Jemaa ; Dept. de Phys. Atomique & Moleculaire, Rennes I Univ., France ; J. L. Queffelec ; D. Travers ; D. Simon

Experimental results concerning electrical conduction through the main Cu2S film grown on copper samples in a reaction chamber (10 p.p.m. of H2S) are reported. The study was based on the analysis of the current-voltage characteristics of the contact point using a fully automatic device which avoids electrical or mechanical breakdowns. It is shown that the contact point has an equivalent circuit composed of a diode, thermoelectric voltage, and contact resistance. The diode parameters resulting from the junction between Cu2S (semiconductor) and copper (metal) are determined. A relationship between reverse current density and the thickness of the film (100 to 5000 Å) is reported to explain and predict film breakdown

Published in:

IEEE Transactions on Components, Hybrids, and Manufacturing Technology  (Volume:13 ,  Issue: 4 )