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Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

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11 Author(s)
Ho, Szu-Han ; Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan ; Chang, Ting-Chang ; Wu, Chi-Wei ; Lo, Wen-Hung
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This letter investigates a hump in gate current after dynamic negative bias stress (NBS) in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. By measuring gate current under initial through body floating and source/drain floating, it shows that hole current flows from source/drain. The fitting of gate current-gate voltage characteristic curve demonstrates that Frenkel-Poole mechanism dominates the conduction. Next, by fitting the gate current after dynamic NBS, in the order of Frenkel-Poole then tunneling, the Frenkel-Poole mechanism can be confirmed. These phenomena can be attributed to hole trapping in high-k bulk and the electric field formula Ehigh-k εhigh-k = Q + Esio2εsio2.

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Applied Physics Letters  (Volume:101 ,  Issue: 5 )