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Correction to “Performance Enhancement of Blue Light-Emitting Diodes Without an Electron-Blocking Layer by Using p-Type Doped Barriers and a Hole-Blocking Layer of Low Al Mole Fraction” [Feb 12 169-174]

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3 Author(s)
Zhang, Y.-Y. ; Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, China ; Fan, G.-H. ; Zhang, T.

In the above titled paper (ibid., vol.48, no. 2, pp. 169-174, Feb. 2012), the affiliation of Yun-Yan Zhang should have read as follows. Y.Y. Zhang is with the Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China (e-mail: yunyan_zhang@126.com).

Published in:
Quantum Electronics, IEEE Journal of  (Volume:48 ,  Issue: 9 )

Date of Publication: Sept. 2012

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