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Channel Thickness Dependence of InGaAs Quantum-Well Field-Effect Transistors With High- \kappa Gate Dielectrics

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7 Author(s)
Xue, Fei ; Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA ; Aiting Jiang ; Han Zhao ; Chen, Yen-Ting
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We have studied channel thickness dependence of InGaAs quantum-well field-effect transistors (QWFETs) with high-κ gate dielectrics. Device performances of ultrathin 5- and 10-nm-channel In0.7Ga0.3As QWFETs with gate length down to sub-50-nm regime have been investigated. Thinning down the channel improves subthreshold characteristics and reduces the short-channel effect. The 5-nm In0.7Ga0.3As channel (Lg = 40 nm) devices exhibit a reduced subthreshold swing (SS) of around 100 mV/dec and drain-induced barrier lowering (DIBL) of 128 mV/V compared to 10-nm In0.7Ga0.3As channel devices (SS of ~ 140 mV/dec and DIBL of ~ 275 mV/V). However, the drawback for thinner channel devices is that the effective channel mobility also decreases. At inversion charge density of 3 ×1012/cm2, 10-nm In0.7Ga0.3As channel devices exhibit mobility of 1860 cm2/V·s versus mobility of 1460 cm2/V·s for 5-nm In0.7Ga0.3As channel devices.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 9 )