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Photoluminescence spectra of high temperature vacuum annealed porous silicon

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3 Author(s)
D. B. Dimitrov ; Inst. of Solid State Phys., Sofia, Bulgaria ; D. Papadimitriou ; G. Beshkov

The photoluminescence (PL) spectra of porous silicon layers annealed for 15 to 180 sec in vacuum at temperatures above 800°C are presented. The experimental spectra consist of two main PL bands at 1.8 eV and 2.2 eV. The 2.2 eV band is independent of the annealing time and origins from silicon nanocrystallites. The 1.8 eV band decreases with increasing annealing time following second-order kinetics, typical for silicon dihydride decomposition

Published in:

Microelectronics, 1997. Proceedings., 1997 21st International Conference on  (Volume:1 )

Date of Conference:

14-17 Sep 1997