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The author reports 100K write cycle endurance, 10 year data retention at 70°C, and reliability results on a 130nm 1Mb E2PROM compatible Conductive Bridge Random Access Memory (CBRAM™)1, the first known commercialization of a CBRAM technology. Excellent resistance distributions and operating windows are shown. Process requirements, considerations and optimization to integrate an Ag alloy, GeSx based CBRAM technology in a standard foundry logic process are discussed. Moreover, the basic operating principles of a CBRAM cell in a memory array are reviewed.