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Conductive bridging RAM (CBRAMT™: A scalable, low power and high performance resistive memory technology platform

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1 Author(s)
Van Buskirk, M. ; Adesto Technol., Inc., Sunnyvale, CA, USA

The author reports 100K write cycle endurance, 10 year data retention at 70°C, and reliability results on a 130nm 1Mb E2PROM compatible Conductive Bridge Random Access Memory (CBRAM™)1, the first known commercialization of a CBRAM technology. Excellent resistance distributions and operating windows are shown. Process requirements, considerations and optimization to integrate an Ag alloy, GeSx based CBRAM technology in a standard foundry logic process are discussed. Moreover, the basic operating principles of a CBRAM cell in a memory array are reviewed.

Published in:

Interconnect Technology Conference (IITC), 2012 IEEE International

Date of Conference:

4-6 June 2012