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Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz

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8 Author(s)
Medjdoub, F. ; Inst. d''Electron. de Microelectron. et de Nanotechnol., Villeneuve d''Ascq, France ; Tagro, Y. ; Zegaoui, M. ; Grimbert, B.
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We report on the millimeter-wave noise performance of AlN/GaN/AlGaN double heterostructure (DHFET) grown on a 100-mm Si substrate with low-noise properties up to 40 GHz. The ultrathin-barrier GaN DHFETs simultaneously exhibit high current density, high transconductance, and high frequency performance (above 100 GHz) while showing low dc-to-RF dispersion and low gate and drain leakage currents. Consequently, sub-1-dB minimum noise figure at 36 GHz with an associated gain of 7.5 dB has been achieved. To our knowledge, this is the best noise performance reported in the Ka-band for any GaN device.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 9 )

Date of Publication:

Sept. 2012

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