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How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2–3 \mu{\rm m}

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8 Author(s)
Huang, Jianliang ; Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China ; Wenquan Ma ; Wei, Yang ; Yanhua Zhang
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The photoluminescence (PL) peak of an InAs/GaSb superlattice (SL) structure is found to be shifted from 5.8 to 4.0 \mu{\rm m} at 77 K, when the growth temperature is lowered from 380 to 340 ^{\circ}{\rm C} . The PL peak shift is related to In intermixing, thus some SL structures cannot reach a detection wavelength {< }{\rm 3}~\mu{\rm m} . Increasing the GaSb layer thickness in the SL structure is an effective way to reach a detection wavelength of 2–3 \mu{\rm m} . A p-i-n detector with a 50% cutoff wavelength at 2.56 \mu{\rm m} at 77 K is demonstrated.

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Quantum Electronics, IEEE Journal of  (Volume:48 ,  Issue: 10 )