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An approach to embed active devices for the fabrication of THz circuits is presented in this paper. GaAs Schottky diodes are integrated with wide-band log-periodic antennas to demonstrate THz imaging array. Calculated noise equivalent power (NEP) based on measured I-V characteristic and diode small-signal equivalent model show that a minimum value of 2pW/Hz0.5 can be reached at 100GHz. Calculations of sensitivity based on measured detector parameters are also presented to 1 THz. The proposed fabrication approach is large-area, low-cost and low-temperature process compatible, and can be implemented in heterogeneous integration of THz devices on a host of substrates.
Date of Conference: May 29 2012-June 1 2012