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An approach to embed active devices for the fabrication of THz circuits is presented in this paper. GaAs Schottky diodes are integrated with wide-band log-periodic antennas to demonstrate THz imaging array. Calculated noise equivalent power (NEP) based on measured I-V characteristic and diode small-signal equivalent model show that a minimum value of 2pW/Hz0.5 can be reached at 100GHz. Calculations of sensitivity based on measured detector parameters are also presented to 1 THz. The proposed fabrication approach is large-area, low-cost and low-temperature process compatible, and can be implemented in heterogeneous integration of THz devices on a host of substrates.
Published in:
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Date of Conference: May 29 2012-June 1 2012
- Page(s):
- 2082 - 2086
- ISSN :
- 0569-5503
- E-ISBN :
- 978-1-4673-1964-5
- Print ISBN:
- 978-1-4673-1966-9
- INSPEC Accession Number:
- 12906870
- Conference Location :
- San Diego, CA
- Digital Object Identifier :
- 10.1109/ECTC.2012.6249128
- Product Type:
- Conference Publications
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