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Thermal effects on through-silicon via (TSV) signal integrity

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8 Author(s)
Manho Lee ; Dept. of Electr. Eng. Korea Adv., Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea ; Jonghyun Cho ; Joohee Kim ; Jun So Pak
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The thermal effect on through-silicon via (TSV) noise coupling and S21 of TSV channel were measured in both frequency and time domain from corresponding TSV based passive chips. These measurement results are analyzed using the temperature-dependent TSV lumped model to TSV channel and shows good correlation with measurement. Under the hundreds-of-MHz frequency range, increasing temperature decreases the S21 of TSV channel, but over that frequency range, increasing temperature increases the S21. These phenomena are explained from the model which thermal dependence of the materials is applied.

Published in:

Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd

Date of Conference:

May 29 2012-June 1 2012