Cart (Loading....) | Create Account
Close category search window
 

Locally induced stress in stacked ultrathin Si wafers: XPS and μ-Raman study

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)

Induced local stress arising from local deformation of top silicon die in the vertically stacked LSI die has been investigated via x-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy (μRS). The large positive shift in the core level Si-2s and Si-2p XP spectra for the thinned die revealed that thinned dies were under heavy stress/strain even before stacking. The core level binding energy shift, ΔEb for Si-1s core level and the relative chemical shift ΔEr for Si in the vertically integrated die system showed that the stacked Si dies were under different stresses in the μ-bump and the bump-space regions. It was also inferred from the μRS results that the stacked 10 μm-thick-Si dies were under large tensile strain of >;1.5 GPa and a relatively small compressive stress of ~0.5 GPa in the μ-bump and bump-space region, respectively.

Published in:

Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd

Date of Conference:

May 29 2012-June 1 2012

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.