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Reliability analyses on a TSV structure for CMOS image sensor

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2 Author(s)
Ben-Je Lwo ; Dept. of Mechatron., Energy & Aerosp. Eng., Nat. Defense Univ., TaShi, Taiwan ; Chung-Yen Ni

In order to assess the reliability behavior of a typical TSV structure, this study describes the reliability tests to qualify the samples with three types of the TSV test-keys, which includes the Kelvin structure, the via-chain, and the meander metal lines. With enough number of the samples for statistic analyses, resistances of the samples were first found increased after the preconditioning process. The temperature cycling tests (TCT) and the temperature humidity cycling tests (THTC) were next performed according to the JEDEC standards, and resistances variations on the samples were recorded during the tests. The Weibull parameters for the testing samples were finally extracted from the testing data to obtain the lifetime performance of the samples.

Published in:

Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd

Date of Conference:

May 29 2012-June 1 2012