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Study of low temperature and high heat-resistant fluxless bonding via nanoscale thin film control toward wafer-level multiple chip stacking for 3D LSI

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7 Author(s)
Morinaga, E. ; Div. of Mater. & Manuf. Sci., Osaka Univ., Suita, Japan ; Oka, Y. ; Nishimori, H. ; Miyagawa, H.
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The three dimensional system in package (3D-SiP) has been regarded as a promising solution to the scaling limit problem in the semiconductor industry. Practical realization of the 3D-SiP needs establishing a standard bonding technology for chip stacking. This research focuses on a low temperature and high heat-resistant fluxless bonding method, which can overcome the bump height variation problem in a chip/wafer, using high-boiling alcohol, an indium-tin (InSn) thin film and its transformation into high-melting intermetallic compound (IMC). Experimental studies showed high-rate deposition of InSn alloy and successive deposition of silver achieve successful bonding where the joint has high melting point (higher than 673K).

Published in:

Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd

Date of Conference:

May 29 2012-June 1 2012