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An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell

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7 Author(s)
Daolin Cai ; State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China ; Houpeng Chen ; Qian Wang ; Yifeng Chen
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In this letter, an 8-Mb phase-change random access memory (PCRAM) chip has been developed in a 130-nm 4-ML standard CMOS technology based on a Resistor-on-Via-stacked-Plug (RVP) storage cell structure. This phase-change resistor is formed after CMOS logic fabrication. PCRAM can be embedded without changing any logic device and process. The memory cell selector is implemented by a standard 1.2-V nMOS device. The currents of the set and reset operations are 0.4 and 2.2 mA, respectively. The best endurance is over 1010 cycles.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 9 )