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Investigation of pickup effect for multi-fingered ESD devices in 0.5 μm 5V/ 18V CDMOS process

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4 Author(s)
Acheng Zhou ; Fac. of Mater., Optoelectron. & Phys., Xiangtan Univ., Xiangtan, China ; Yang Wang ; Kehan Zhu ; Xiangliang Jin

Pickup effect for 5V NMOS and 18V lateral double-diffused NMOS under electrostatic discharge (ESD) stress is investigated and characterised by a transmission line pulse test system in a standard 0.5 μm 5V/18V CDMOS process, respectively. Experimental results show that 5V low-voltage multi-fingered NMOS devices cannot be turned-on uniformly with more added inner pickups and thus the ESD robustness degrades. For 18V high-voltage multi-fingered LDNMOS structures, it is critical to merge all pickups with the P-well guard-ring of the device to achieve uniform current conduction and better ESD performance.

Published in:

Electronics Letters  (Volume:48 ,  Issue: 15 )

Date of Publication:

July 19 2012

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