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Performances of two switched emitter follower structures for large bandwidth applications have been optimised, compared, implemented and measured. These circuits have been fabricated with a 320 GHz-FT InP double heterojunction bipolar transistor process. Measurements in track mode show a small-signal bandwidth over 65 GHz for one structure and over 50 GHz for the other. Track mode SFDR measured for 500 mVPP up to 15 GHz signal input is greater than 45 dBc.