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Passive Circuit Technologies for mm-Wave Wireless Systems on Silicon

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6 Author(s)
Long, J.R. ; Electron. Res. Lab., Delft Univ. of Technol., Delft, Netherlands ; Yi Zhao ; Wanghua Wu ; Spirito, M.
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The performance characteristics of transmission lines, silicon integrated waveguides, tunable LC resonators and passive combiners/splitters and baluns are described in this paper. It is shown that Q-factor for an on-chip LC tank peaks between 20 and 40 GHz in a 65 nm RF-CMOS technology; well below the bands proposed for many mm-wave applications. Simulations also predict that the Q-factor of differential CPW transmission lines on-chip can exceed 20 at 60 GHz in RF-CMOS when a floating shield is applied, outperforming unshielded variants employing more advanced metal stacks. A PA circuit demonstrator for advanced on-chip passive power combiners, splitters and baluns realizes peak-PAE of 18% and Psat better than 20 dBm into a 50 Ω load at 62 GHz. An outlook to the enablement of digitally intensive mm-wave ICs and low-loss passive interconnections (0.15 dB/mm measured loss at 100 GHz) concludes the paper.

Published in:

Circuits and Systems I: Regular Papers, IEEE Transactions on  (Volume:59 ,  Issue: 8 )
RFIC Virtual Journal, IEEE

Date of Publication:

Aug. 2012

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